Speaker
摘要
如今，忆阻器主要依赖外部电路来管理功耗，尤其是在高电场下，这增加了系统复杂性并降低了能效。为解决这一问题，人们希望实现具有内在限流机制的忆阻器，使其能够在高电场下高效工作。在此，我们展示了一种稳健的掺锡β-氧化镓（β-Ga2O3）忆阻器，该忆阻器在毫伏（MV）级别展现出显著的负微分电阻（NDR）效应，能够有效自我限制过冲电流。NDR效应与电阻切换特性的共存归因于氧空位的可逆迁移和肖特基势垒的动态调制。重要的是，该忆阻器在已报道的同类产品中展现了创纪录的NDR性能指标，包括高达3.55的最陡峭斜率和长达103个周期和104秒的最长耐久性。此外，该忆阻器还表现出典型的模拟电阻切换和基本的人工突触行为。在高电场下最陡峭且最稳定的NDR效应的辅助下，这种稳健的Ga2O3忆阻器为高性能、节能的多功能应用提供了一个有前景的平台。
Abstract
Nowadays, memristors mainly rely on external circuits to manage power consumption, especially under high electric fields,which increases system complexity and reduces
energy efficiency. To solve this problem, it is desirable to achieve memristors with an intrinsic current-limiting mechanism that can energy-efficiently work under high electricfields. Here,we demonstrate a robust Sn-doped β-Ga2O3 memristor that exhibits aprominent negative differential resistance(NDR) effectat the MVm−1 level, which enables effective self-limiting of over shoot current.The coexistence of the NDR and resistive switching characteristics is attributed to the reversible migration of oxygen vacancies and dynamic modulation of the Schottky barrier. Importantly, thememristor demonstrates record breaking NDR performance metrics, including the sharpest slope up to 3.55 and the longest endurance up to 103 cycles and 104 seconds, among the reported ones.Furthermore, the memristor exhibits typical an alog resistive switching and essential artificial synapse behaviors. Assisted with the sharpest and stablest NDR effect under high electricfield, the robust Ga2O3 memristor offers apromising plat form toward high-performance energy-efficient multifunctional applications.
| 关键词 | β-Ga2O3、负微分电阻、节能、模拟电阻切换、人工突触 |
|---|---|
| Keywords | β-Ga2O3, negative differential resistance, energy efficient, analog resistive switching, artificial synapse |
