2026年“核理安邦”联合博士生学术论坛

基于SRIM和TCAD的GaN中子探测器瞬态电流响应研究

Not scheduled

1h

地址：清华大学校内

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Speaker

Dr 相 传峰 (核生化灾害防护化学全国重点实验室)

摘要

本研究利用计算机辅助设计（Technology Computer Aided Design，TCAD）软件，确定了p-i-n氮化镓（Gallium Nitride，GaN）二极管中本征氮化镓（i-GaN）层的最佳厚度和掺杂浓度，以提高探测效率和器件可靠性。该研究了α和3H粒子在 GaN p-i-n二极管内引起的能量损失和瞬态电流响应。此外，研究了由电子-空穴对收集引起的瞬态电流行为，结果表明，瞬态电流响应中的拖尾效应源于辐射诱导的空穴积累。增大探测器的反向偏压会导致瞬态电流脉冲幅度增大，这归因于耗尽区展宽增强了载流子的收集。这些结果有望推动基于GaN的中子探测器技术的发展，这对于下一代核科学和空间科学应用至关重要。

Abstract

This study employed Technology Computer-Aided Design (TCAD) simulations to determine the optimal thickness and doping concentration of the intrinsic gallium nitride (i-GaN) layer in p-i-n GaN diodes, aiming to improve detection efficiency and device reliability. The energy loss and transient current responses induced by α particles and tritium (3H) particles in GaN p-i-n diodes were investigated. In addition, the transient current behavior associated with electron–hole pair collection was analyzed. The results indicate that the tailing effect observed in the transient current response originates from radiation-induced hole accumulation. Increasing the reverse bias voltage of the detector leads to a higher transient current pulse amplitude, which is attributed to the widening of the depletion region and the resulting enhancement of carrier collection. These findings are expected to contribute to the development of GaN-based neutron detector technologies, which are of critical importance for next-generation applications in nuclear science and space science.